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SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 ? JANUARY 1996
FEATURES
ZVP3306F
* 60 Volt V DS
* R DS(on) =14 ?
PARTMARKING DETAIL ? ML
COMPLEMENTARY TYPE ? ZVN3306F
ABSOLUTE MAXIMUM RATINGS.
D
SOT23
G
S
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T amb =25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T amb =25°C
Operating and Storage Temperature Range
SYMBOL
V DS
I D
I DM
V GS
P tot
T j :T stg
VALUE
-60
-90
-1.6
± 20
330
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV DSS
-60
V
I D =-1mA, V GS =0V
Gate-Source Threshold
Voltage
V GS(th)
-1.5
-3.5
V
I D =-1mA, V DS = V GS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
I GSS
I DSS
I D(on)
R DS(on)
g fs
C iss
C oss
-400
60
20
-0.5
-50
14
50
25
nA
μ A
μ A
mA
?
mS
pF
pF
V GS = ± 20V, V DS =0V
V DS =-60 V, V GS =0V
V DS =-48 V, V GS =0V, T=125°C (2)
V DS =-18 V, V GS =-10V
V GS =-10V, I D =-200mA
V DS =-18V, I D =-200mA
V DS =-18V, V GS =0V, f=1MHz
Reverse Transfer Capacitance (2) C rss
8
pF
Turn-On Delay Time (2)(3)
t d(on)
8
ns
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
t r
t d(off)
t f
8
8
8
ns
ns
ns
V DD ≈ -18V, I D =-200mA
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2% (2) Sample test.
(3) Switching times measured with 50 ? source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 -434
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